SiGe BiCMOS and RF CMOS

Our world-class SiGe BiCMOS and RF CMOS technologies enable many high speed consumer applications including: wireless transceivers and front-end modules, TV tuners and other set-top box and satellite receiver components, optical networking components, and radio transceivers in cell phone, WLAN, WiMAX and GPS devices.

We offer SiGe BiCMOS process geometries at 0.35-, 0.18- and 0.13-micron with speeds of up to 280GHz. Process options include deep trench, ultra thick metal of either Aluminum or Copper, deep N-Well, MIM caps ranging from 1fF/µm2 to 5.6fF/µm2, as well as high-speed PNP to form a Complementary-BiCMOS technology.

We have pushed our SiGe performance, delivering design kits for a 280GHz SiGe BiCMOS process, the highest performance BiCMOS technology available in the industry. This offering targets optical networks, automotive collision avoidance radar, phased array radar and other mmWave products. We continue to expand our technology with recent additions of a SiGe power amplifier process with deep-silicon-via. This process has demonstrated performance comparable to that of GaAs at only 40% of the cost while affording levels of integration not otherwise possible.

Our RF CMOS offering includes both bulk and SOI versions in the 0.18- and 0.13-micron nodes. The RF CMOS SOI technology is optimized for switch applications and can deliver best-in-class insertion loss, isolation, and linearity for RF Switches in cellular and WiFi devices.

We have expanded our already unique offering of complementary-BiCMOS foundry processes in both 0.35µm and 0.18µm nodes. The new processes include a high-voltage version with 14V NPN and PNP and a high speed version with PNP Ft of 23GHz prototyping with initial customers. These technologies are appropriate for applications such as line drivers for DSL and HomePlug and hard-disk drive pre-Amps.